The Short-Channel Threshold Voltage Model for Junction less Surrounding-Gate MOSFETs

被引：0
|
作者：
Chiang, T. K. [1 ]
Chang, D. H. [1 ]
机构：
[1] Natl Univ Kaoshiung, Dept Elect Engn, Kaohsiung, Taiwan
来源：
2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012) | 2012年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Based on the quasi-2D scaling equation, a new threshold voltage model for short-channel junctionless cylindrical, surrounding-gate (JLCSG) MOSFETs is developed. The model explicitly shows how the device parameters of the silicon thickness, oxide thickness, drain bias, and channel length affect the threshold voltage behavior. The model can also be extendable to its counterpart of junction-based cylindrical, surrounding-gate (JBCSG) MOSFETs. The model is velidated by the 3D numerical simulator and can be easily used to explore the threshold voltage characteristics of junctionless cylindrical, surrounding-gate MOSFEs for its simple formula and computational efficiency..
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页码：667 / 670
页数：4
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