Study on Void Growth in Micro-Size SnAg Solder Bump

被引:0
|
作者
Lin Xiaoqin [1 ,2 ]
Luo Le [1 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
[2] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
关键词
SnAg; voids; IMC; reflow; aging;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The Sn-3.0Ag solder bumps with size less than 100 mu m were fabricated by electroplating. The evolution and distribution of the void at the SnAg/Cu interface and its influencing factors were studied. The results show that the volume shrinkage during phase transformation was believed to be the main reason for the void formation during multi-reflow, while the Kirkendall effect was believed to be the main reason for the void formation during aging. The void growth in the Cu3Sn (epsilon-phase) was affected by the initial morphology of the Cu6Sn5 (eta-phase), a thick eta-phase and the voids among its boundaries promoting the void growth in the epsilon-phase. The layered epsilon-phase/Cu interface and interconnected voids in the epsilon-phase would be threats to the long-term reliability of solder bumps.
引用
收藏
页码:1903 / 1907
页数:5
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