Application of the surface ionization for the detection of secondary particles in the secondary-ion mass spectrometry (SIMS)

被引：1
|
作者：
Morozov, S. N. [1 ]
Rasulev, U. Kh. [1 ]
机构：
[1] Acad Sci Uzbek, Inst Ion Plasma & Laser Technol, Tashkent 100125, Uzbekistan
来源：
TECHNICAL PHYSICS | 2013年 / 58卷 / 06期
关键词：
EMISSION; SILICON;
D O I：
10.1134/S1063784213060224
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A method for postionization in the course of ion sputtering that is based on surface ionization of the sputtered particles is developed. The estimations show that the method allows a significant increase in the sensitivity of the secondary-ion mass spectrometry for several elements. Nonadditive increase in the sputtering coefficient of indium is experimentally studied using the surface-ionization method of postionization when the number of atoms in projectile clusters Bi (m) (+) (m = 1-7) increases at energies 2-10 keV. Such a scheme for the detection of neutral particles can be used in alternative methods for the surface analysis, in particular, laser evaporation of surface and electron-stimulated desorption.
引用
收藏
页码：821 / 826
页数：6
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