High-performance copper plating process for 65 nm and 45 nm technology nodes

被引：0

作者：

Huang, YC ^{[1
]}

Lin, X ^{[1
]}

Zheng, B ^{[1
]}

Ngai, CS ^{[1
]}

Paneccasio, V ^{[1
]}

Behnke, J ^{[1
]}

Witt, C ^{[1
]}

Dukovic, J ^{[1
]}

Rosenfeld, A ^{[1
]}

机构：

[1] Appl Mat Inc, Santa Clara, CA 95054 USA

来源：

ADVANCED METALLIZATION CONFERENCE 2005 (AMC 2005) | 2006年

关键词：

D O I：

暂无

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

A new level of copper plating performance has been achieved by coordinated advances in process equipment and additive chemistry. The process, characterized by fast bottom-up fill, produces superior gapfill performance at the 45 nm node dimensions. Overplating of dense arrays is also reduced. Extensive integration testing of the process revealed a significant reduction in post-CMP defects. Parametric yield and reliability performance were validated in a sub-90 nm process flow.

引用

页码：507 / 511

页数：5

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