Enhanced electron-electron interaction, weak localization and electron-magnon scattering contributions to electrical resistivity in Fe- and Co-based metallic glass wires

被引:15
|
作者
Srinivas, S
Kaul, SN
Kane, SN
机构
[1] Univ Hyderabad, Sch Phys, Hyderabad 500046, Andhra Pradesh, India
[2] Dev Ahilya Univ, Sch Phys, Indore 452001, Madhya Pradesh, India
关键词
D O I
10.1016/S0022-3093(99)00144-1
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
An extensive analysis of high-precision electrical resistivity (rho) data taken on Fe- and Co- based metallic glass wires over the temperature range 10 K less than or equal to T less than or equal to 300 K and discussion of the results, so obtained, in terms of the existing theoretical models identifies enhanced electron-electron interaction (EEI), weak localization (WL) and electron-magnon (EM) scattering as the main mechanisms governing the temperature dependence of rho in these systems and determines their relative magnitudes accurately. Out of the inelastic processes that destroy phase coherence, inelastic electron-phonon scattering turns out to be the most effective one and its dephasing action persists to temperatures as high as 300 K. While EEI and WL effects are basically responsible for the negative temperature coefficient of resistivity (TCR), EM scattering accounts for the positive TCR. The observed resistivity minima are thus an outcome of these competing contributions to rho(T). (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:211 / 223
页数:13
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