20-Gb/s integrated DBR laser EA modulator by selective area growth for 1.55-mu m WDM applications

被引：30
|
作者：
Delprat, D
Ramdane, A
Silvestre, L
Ougazzaden, A
Delorme, F
Slempkes, S
机构：
[1] France Telecom., CNET/PAB
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 07期
关键词：
distributed Bragg reflector lasers; optical communication; optical transmitters; quantum-well devices; semiconductors;
D O I：
10.1109/68.593338
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
For the first time, selective area growth (SAG) has been used for the monolithic integration of a distributed Bragg reflector (DBR) laser with an electroabsorption (EA) modulator, designed for WDM communication systems at 1.55 mu m. A 16-GHz bandwidth combined with a 6-nm tuning range make this component compatible with multiwavelength 20-Gb/s transmission experiments.
引用
收藏
页码：898 / 900
页数：3
相关论文
共 24 条
  • [1] Record tuning range of a 1.55 mu m DBR laser realized by selective area growth
    Delprat, D
    Silvestre, L
    Ougazzaden, A
    Delorme, F
    Slempkes, S
    Ramdane, A
    1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 162 - 164
  • [2] Integrated tunable DBR laser with EA-Modulator grown by selective area MOVPE
    Katoh, Y
    Yamada, K
    Kunii, T
    Ogawa, Y
    IEICE TRANSACTIONS ON ELECTRONICS, 1997, E80C (01) : 69 - 73
  • [3] 20-GB/S MONOLITHIC P-I-N/HBT PHOTORECEIVER MODULE FOR 1.55-MU-M APPLICATIONS
    LUNARDI, LM
    CHANDRASEKHAR, S
    GNAUCK, AH
    BURRUS, CA
    HAMM, RA
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (10) : 1201 - 1203
  • [4] Selective-area MOVPE growth for 10 Gbit/s electroabsorption modulator integrated with a tunable DBR laser
    Kim, Sung-Bock
    Sim, Jae-Sik
    Kim, Ki Soo
    Sim, Eun-Deok
    Ryu, Sang-Wan
    Park, Hong Lee
    JOURNAL OF CRYSTAL GROWTH, 2007, 298 : 672 - 675
  • [5] 20 GBIT/S, 1.55-MU-M STRAINED-INGAASP MQW MODULATOR INTEGRATED DFB LASER MODULE
    WAKITA, K
    SATO, K
    KOTAKA, I
    YAMAMOTO, M
    KATAOKA, T
    ELECTRONICS LETTERS, 1994, 30 (04) : 302 - 303
  • [6] SHORT OPTICAL PULSE GENERATED BY INTEGRATED MQW DBR LASER EA-MODULATOR FABRICATED BY SELECTIVE-AREA MOVPE
    CHEN, YK
    TANBUNEK, T
    LOGAN, RA
    TATE, A
    SERGENT, AM
    WECHT, KW
    SCIORTINO, PF
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (11) : 2118 - 2119
  • [7] 2.5Gb/s 1.55 μm InGaAsP/InP DFB laser/electroabsorption modulator integrated device
    Luo, Yi
    Sun, Changzheng
    Wen, Guopeng
    Li, Tongming
    Yang, Xinmin
    Wu, Yousheng
    Wang, Renfan
    Wang, Cailing
    Huang, Tao
    Jin, Jinyan
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1999, 20 (05): : 416 - 420
  • [8] 10 Gbits-1 electroabsorption modulator integrated with a DBR laser using the selective area growth technique
    Sim, JS
    Kim, SB
    Ryu, SW
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (10) : L47 - L49
  • [9] Dispersion-penalty-free transmission over 130-km standard fiber using a 1.55-mu m, 10-Gb/s integrated EA/DFB laser with low-extinction ratio and negative chirp
    Park, YK
    Nguyen, TV
    Morton, PA
    Johnson, JE
    Mizuhara, O
    Jeong, J
    Tzeng, LD
    Yeates, PD
    Fullowan, T
    Sciortino, PF
    Sergent, AM
    Tsang, WT
    Yadvish, RD
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1996, 8 (09) : 1255 - 1257
  • [10] Polarisation-insensitive clamped-gain SOA with integrated spot-size convertor and DBR gratings for WDM applications at 1.55 mu m wavelength
    Bachmann, M
    Doussiere, P
    Emery, JY
    NGo, R
    Pommereau, F
    Goldstein, L
    Soulage, G
    Jourdan, A
    ELECTRONICS LETTERS, 1996, 32 (22) : 2076 - 2078
123