Optical and electrical properties of Mg-doped zinc tin oxide films prepared by radio frequency magnetron sputtering

被引：13
|
作者：
Ma, Tae Young [1 ]
Choi, Mu Hee
机构：
[1] Gyeongsang Natl Univ, Dept Elect Engn, Jinju 660701, Gyeongnam, South Korea
来源：
APPLIED SURFACE SCIENCE | 2013年 / 286卷
基金：
新加坡国家研究基金会;
关键词：
Zinc tin oxide; Electron suppressor; RF magnetron sputtering; Transparent thin-film transistors; XPS; SNO2; THIN-FILMS; INDIUM-OXIDE; URBACH TAIL; TEMPERATURE; TRANSISTORS; XPS; STABILITY; THICKNESS; LAYER;
D O I：
10.1016/j.apsusc.2013.09.035
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
In this study, magnesium (Mg)-doped zinc tin oxide (ZTO) films were deposited by radio frequency (RF) magnetron sputtering. The Mg was selected as an electron suppressor for the ZTO films. X-ray diffraction (XRD) was carried out to observe the crystallinity of the films. The Mg-doping effects on the elemental properties of the films were investigated by X-ray photoelectron spectroscopy (XPS). The optical properties, such as transmittance, optical band gap, Urbach energy, and refractive index, were compared as a function of Mg content. Bottom-gate transparent thin-film transistors (TTFTs) were fabricated on l\P Si wafers. The turn-off voltage, threshold voltage, and mobility variation as a function of Mg content were studied. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：131 / 136
页数：6
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