MODELING OF HALF-HEUSLER CRYSTALS WITH THE CHALCOPYRITE STRUCTURE: Li2MgZnX2 (X = N, P, As, Sb)

被引:1
|
作者
Basalaev, Yu. M. [1 ]
Starodubtseva, M. V. [1 ]
机构
[1] Kemerovo State Univ, Kemerovo, Russia
关键词
chalcopyrite; half-Heusler compound; band structure; electron density; deformation density; chemical bond; DENSITY;
D O I
10.1134/S0022476616080023
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
A model of Li2MgZnX2 half-Heusler compounds with the chalcopyrite structure is considered. The electronic structure is studied from first principles, showing that Li2MgZnX2 are direct-gap crystals, except for pseudo-direct-gap Li2MgZnP2, with a band gap of 2.7 eV, 2.2 eV, 3.3 eV, and 2.5 eV for X = N, P, As, and Sb, respectively. The band structure and chemical bonding in the model crystals are found to be similar to those in LiMgX and LiZnX half-Heusler crystals. Total electron density and deformation electron density distributions are obtained. It is found that Mg-X and Zn-X ionic-covalent bonds are stronger than Li-X ionic bonds in Li2MgZnX2 crystals, which allows Li atoms to move in the space between MgX4 and ZnX4 cation tetrahedra.
引用
收藏
页码:1499 / 1504
页数:6
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