Process considerations for layer-by-layer 3D patterning of silicon, using ion implantation, silicon deposition, and selective silicon etching

被引：3

作者：

Gylfason, Kristinn B. ^{[1
]}

Fischer, Andreas C. ^{[1
]}

Malm, B. Gunnar ^{[2
]}

Radamson, Henry H. ^{[2
]}

Belova, Lyubov M. ^{[3
]}

Niklaus, Frank ^{[1
]}

机构：

[1] KTH Royal Inst Technol, Microsyst Technol Lab MST, SE-10044 Stockholm, Sweden

[2] KTH Royal Inst Technol, Integrated Devices & Circuits Lab IDC, SE-16440 Kista, Sweden

[3] KTH Royal Inst Technol, Engn Mat Phys Lab EMP, SE-10044 Stockholm, Sweden

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2012年 / 30卷 / 06期

关键词：

BEAM; MICROFABRICATION; NANOSTRUCTURES; FABRICATION; BORON;

D O I：

10.1116/1.4756947

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors study suitable process parameters, and the resulting pattern formation, in additive layer-by-layer fabrication of arbitrarily shaped three-dimensional (3D) silicon (Si) micro-and nanostructures. The layer-by-layer fabrication process investigated is based on alternating steps of chemical vapor deposition of Si and local implantation of gallium ions by focused ion beam writing. In a final step, the defined 3D structures are formed by etching the Si in potassium hydroxide, where the ion implantation provides the etching selectivity. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.4756947]

引用

页数：4

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