Impact of propagation effects on intersubband Rabi flopping in semiconductor quantum wells

被引：0

作者：

Zhou, Xusheng ^{[1
]}

Cui, Ni ^{[1
]}

Zu, Jifeng ^{[1
]}

Gong, Shangqing ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Shanghai 201800, Peoples R China

来源：

CHINESE OPTICS LETTERS | 2008年 / 6卷 / 09期

关键词：

D O I：

10.3788/COL20080609.0689

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We investigate intersubband Rabi flopping in modulation-doped semiconductor quantum wells with and without the propagation effects. respectively. It is shown that propagation effects have a larger impact oil Rabi flopping than the nonlinearities rooted from electron-electron interactions in multiple quantum wells. By using ultrashort pi pulses, an almost complete population inversion exists if the propagation effects are not considered; while no complete population inversion occurs in the presence of propagation effects. Furthermore. the magnitude of the impact of propagation effects may be controlled by varying the carrier density.

引用

页码：689 / 692

页数：4

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