Time-resolved scanning near-field microscopy of InGaN laser diode dynamics

被引：6

作者：

Schwarz, U. T. ^{[1
]}

Lauterbach, C. ^{[1
]}

Schillgalies, M. ^{[2
]}

Rumbolz, C. ^{[2
]}

Furitsch, M. ^{[2
]}

Lell, A. ^{[2
]}

Haerle, V. ^{[2
]}

机构：

[1] Univ Regensburg, Inst Angew & Expt Phys, D-93040 Regensburg, Germany

[2] OSRAM Opto Semicond GmbH, D-93055 Regensburg, Germany

来源：

SEMICONDUCTOR LASERS AND LASER DYNAMICS II | 2006年 / 6184卷

关键词：

InGaN laser diodes; dynamic properties; scanning near-field microscope (SNOM);

D O I：

10.1117/12.662019

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We combine a scanning near-field microscope (SNOM) with a time-resolved detection scheme to measure the mode dynamics of InGaN laser diodes emitting at 405 nm. Observed phenomena are filaments, mode competition, near-field phase dynamics, near-field to far-field propagation, and substrate modes. In this article we describe in detail the self-built SNOM, specialized for these studies. We also provide our recipe for SNOM tip preparation using tube etching. Then we compare the mode dynamics for a 3 mu m narrow and a 10 pm wide ridge waveguide laser diode.

引用

页数：9

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