Low temperature carrier transport study of monolayer MoS2 field effect transistors prepared by chemical vapor deposition under an atmospheric pressure

被引：21

作者：

Liu, Xinke ^{[1
]}

He, Jiazhu ^{[1
]}

Liu, Qiang ^{[2
]}

Tang, Dan ^{[1
]}

Wen, Jiao ^{[2
]}

Liu, Wenjun ^{[1
,3
]}

Yu, Wenjie ^{[2
]}

Wu, Jing ^{[4
]}

He, Zhubing ^{[5
]}

Lu, Youming ^{[1
]}

Zhu, Deliang ^{[1
]}

Liu, Wenjun ^{[1
,3
]}

Cao, Peijiang ^{[1
]}

Han, Sun ^{[1
]}

Ang, Kah-Wee ^{[6
]}

机构：

[1] Shenzhen Univ, Nanshan Dist Key Lab Biopolymer & Safety Evaluat, Shenzhen Engn Lab Adv Technol Ceram, Coll Mat Sci & Engn, Shenzhen 518060, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[3] Fudan Univ, Dept Microelect, State Key Lab AS1C & Syst, Shanghai 200433, Peoples R China

[4] Natl Univ Singapore, Dept Phys, Singapore 117576, Singapore

[5] South Univ Sci & Technol China, Dept Mat Sci & Engn, Shenzhen 518055, Peoples R China

[6] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117583, Singapore

来源：

JOURNAL OF APPLIED PHYSICS | 2015年 / 118卷 / 12期

基金：

中国国家自然科学基金; 美国国家科学基金会;

关键词：

IOFFE-REGEL CRITERION; LARGE-AREA; ATOMIC LAYERS; PHASE GROWTH; GRAPHENE; MOBILITY; PERFORMANCE; TRANSITION;

D O I：

10.1063/1.4931617

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Large size monolayer Molybdenum disulphide (MoS2) was successfully grown by chemical vapor deposition method under an atmospheric pressure. The electrical transport properties of the fabricated back-gate monolayer MoS2 field effect transistors (FETs) were investigated under low temperatures; a peak field effect mobility of 59 cm(2) V-1 s(-1) was achieved. With the assist of Raman measurement under low temperature, this work identified the mobility limiting factor for the monolayer MoS2 FETs: homopolar phonon scattering under low temperature and electron-polar optical phonon scattering at room temperature. (C) 2015 AIP Publishing LLC.

引用

页数：7

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