Block Copolymer Nanostructures for Technology

被引：131
|
作者：
Tseng, Yu-Chih [1 ]
Darling, Seth B. [1 ]
机构：
[1] Argonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA
来源：
POLYMERS | 2010年 / 2卷 / 04期
关键词：
block copolymer; lithography; photovoltaics; LINE-EDGE ROUGHNESS; THIN-FILMS; DENSITY MULTIPLICATION; IMMERSION LITHOGRAPHY; CHARGE-TRANSPORT; PATTERNS; DONOR; FABRICATION; ARRAYS; POLY(FERROCENYLSILANES);
D O I：
10.3390/polym2040470
中图分类号：
O63 [高分子化学（高聚物）];
学科分类号：
070305 ; 080501 ; 081704 ;
摘要：
Nanostructures generated from block copolymer self-assembly enable a variety of potential technological applications. In this article we review recent work and the current status of two major emerging applications of block copolymer (BCP) nanostructures: lithography for microelectronics and photovoltaics. We review the progress in BCP lithography in relation to the requirements of the semiconductor technology roadmap. For photovoltaic applications, we review the current status of the quest to generate ideal nanostructures using BCPs and directions for future research.
引用
收藏
页码：470 / 489
页数：20
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