Temperature-dependent Photoluminescence of Boron-doped ZnO Nanorods

被引：15
|
作者：
Kim, Soaram [1 ]
Park, Hyunggil [1 ]
Nam, Giwoong [1 ]
Yoon, Hyunsik [1 ]
Kim, Jong Su [2 ]
Kim, Jin Soo [3 ]
Son, Jeong-Sik [4 ]
Lee, Sang-heon [5 ]
Leem, Jae-Young [1 ]
机构：
[1] Inje Univ, Ctr Nano Mfg, Dept Nano Syst Engn, Gimhae 621749, Gyungnam, South Korea
[2] Yeungnam Univ, Dept Phys, Kyongsan 712749, Gyeongbuk, South Korea
[3] Chonbuk Natl Univ, Div Adv Mat Engn, RCAMD, Jeonju 561756, Chonbuk, South Korea
[4] Kyungwoon Univ, Dept Visual Opt, Gumi 730850, Gyeongbuk, South Korea
[5] Yeungnam Univ, Sch Chem Engn, Kyongsan 712749, South Korea
来源：
BULLETIN OF THE KOREAN CHEMICAL SOCIETY | 2013年 / 34卷 / 11期
基金：
新加坡国家研究基金会;
关键词：
Zinc oxide; B-doped; Hydrothermal; Nanorods; Photoluminescence; OPTICAL-PROPERTIES; THIN-FILMS; ZINC-OXIDE; AL; NANOSTRUCTURES; EMISSION; ENERGY; ARRAY; GA; GROWTH;
D O I：
10.5012/bkcs.2013.34.11.3335
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Boron-doped ZnO (BZO) nanorods were grown on quartz substrates using hydrothermal synthesis, and the temperature-dependence of their photoluminescence (PL) was measured in order to investigate the origins of their PL properties. In the UV range, near-band-edge emission (NBE) was observed from 3.1 to 3.4 eV; this was attributed to various transitions including recombination of free excitons and their longitudinal optical (LO) phonon replicas, and donor-acceptor pair (DAP) recombination, depending on the local lattice configuration and the presence of defects. At a temperature of 12 K, the NBE produces seven peaks at 3.386, 3.368, 3.337, 3.296, 3.258, 3.184, and 3.106 eV. These peaks are, respectively, assigned to free excitons (FX), neutral-donor bound excitons (D degrees X), and the first LO phonon replicas of D degrees X, DAP, DAP-1LO, DAP-2LO, and DAP-3LO. The peak position of the FX and DAP were also fitted to Varshni's empirical formula for the variation in the band gap energy with temperature. The activation energy of FX was about similar to 70 meV, while that of DAP was about similar to 38 meV. We also discuss the low temperature PL near 2.251 eV, related to structural defects.
引用
收藏
页码：3335 / 3339
页数：5
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