A model for indium incorporation in the growth of InGaN films

被引：0
|
作者：
Piner, EL
McIntosh, FG
Roberts, JC
Boutros, KS
Aumer, ME
Joshkin, VA
ElMasry, NA
Bedair, SM
Liu, SX
机构：
来源：
III-V NITRIDES | 1997年 / 449卷
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暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The development of high quality indium based m-nitride compounds is lagging behind the corresponding aluminum and gallium based compounds. Potential problems confronting the growth of epitaxial and double heterostructure InGaN will be discussed. A mass balance model is presented describing the competing reaction pathways occurring during the growth of indium containing compounds. Atomic layer epitaxy and metalorganic chemical vapor deposition grown InGaN films will be used to explain this model. Also, the growth parameters leading to the attainment of high InN percentages, reduced indium metal formation, and improved structural and optical properties of indium containing nitrides will be discussed.
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页码：85 / 88
页数：4
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