Double Patterning for 20nm and Beyond: Design Rules Aware Splitting

Double patterning presents itsel fas one of the best candidates for pushing the limits of ArF lithography to 20nm technology node and below. It has the advantage of theorectically decreassing the minimum resolvable pitch by a factor of two, or the improvement of the process window by relaxing teh lithographic conditions. Double patterning though has its own complexities. Not only sophiscated design in terms of minimum CD and layout topology which increases coding burden on enginers to let the splitting code be aware of such numerous rules. In this context, we are proposing a new double patterning flow. It will be shown how the splitting can be done while taking into account numerous design rules. And finally , rules prioritiation will be discussed in order to avoid conflicts between them.