Electopolishing of p-type silicon thin films in hydrofluoric acid solutions

Anodic dissolution on p-type silicon thin film in hydrofluoric acid solutions leads to a reduction of roughness on these surfaces. The electrochemical behavior in different HF concentration is investigated by linear sweep scan, and it is found that the HF has an important role in electrochemical behaviors, and the anodic dissolution rate increases with increasing HF concentration. A smooth surface state can be obtained in HF solutions, and the technique is promising for fabrication of reflecting silicon surfaces.