Chern-Simons composite fermion theory of fractional Chern insulators

被引:17
|
作者
Sohal, Ramanjit [1 ]
Santos, Luiz H.
Fradkin, Eduardo
机构
[1] Univ Illinois, Dept Phys, 1110 West Green St, Urbana, IL 61801 USA
基金
美国国家科学基金会;
关键词
HALL; STATISTICS; STATES;
D O I
10.1103/PhysRevB.97.125131
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We formulate a Chern-Simons composite fermion theory for fractional Chern insulators (FCIs), whereby bare fermions are mapped into composite fermions coupled to a lattice Chern-Simons gauge theory. We apply this construction to a Chern insulator model on the kagome lattice and identify a rich structure of gapped topological phases characterized by fractionalized excitations including states with unequal filling and Hall conductance. Gapped states with the same Hall conductance at different filling fractions are characterized as realizing distinct symmetry fractionalization classes.
引用
收藏
页数:12
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