Base oxide scaling limit of thermally-enhanced remote plasma nitridation (TE-RPN) process for ultra-thin gate dielectric formation

被引：1

作者：

Yu, MC ^{[1
]}

Huang, HT ^{[1
]}

Chen, CH ^{[1
]}

Wang, MF ^{[1
]}

Hou, TH ^{[1
]}

Lin, YM ^{[1
]}

Jans, SM ^{[1
]}

Diaz, CH ^{[1
]}

Sun, J ^{[1
]}

Fang, YK ^{[1
]}

Chen, SC ^{[1
]}

Yu, CH ^{[1
]}

Liang, MS ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Co, Hsinchu, Taiwan

来源：

2001 IEEE INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING, CONFERENCE PROCEEDINGS | 2001年

关键词：

D O I：

10.1109/ISSM.2001.962943

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate the scaling limit of base oxides treated by thermally-enhanced remote plasma nitridation (TE-RPN) for ultra-thin gate dielectric formation. Under optimized RPN conditions, this work- shows gate-dielectric equivalent thickness (EOT) scalability and no transconductance degradation are characteristic of processes with base oxide thickness down to 17 Angstrom. Thinner base oxides result in reduced EOT scalability and transconductance degradation, resulting in similar to 14 Angstrom manufacturable EOT lindtfor TE-RPN gate dielectrics.

引用

页码：179 / 182

页数：4

共 2 条

[1] Downscaling limit of equivalent oxide thickness in formation of ultrathin gate dielectric by thermal-enhanced remote plasma nitridation
Chen, CH
Fang, YK
Ting, SF
Hsieh, WT
Yang, CW
Hsu, TH
Yu, MC
Lee, TL
Chen, SC
Yu, CH
Liang, MS
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (05) : 840 - 846
[2] He plus remote plasma nitridation of ultra-thin gate oxide for deep submicron CMOS technology applications
Ting, SF
Fang, YK
Chen, CH
Yang, CW
Yu, MC
Jang, SM
Yu, CH
Liang, MS
Chen, SW
Shih, R
ELECTRONICS LETTERS, 2001, 37 (12) : 788 - 790

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