Optical characterization of Eu-doped β-Ga2O3 thin films

被引：63
|
作者：
Gollakota, P.
Dhawan, A.
Wellenius, P.
Lunardi, L. M.
Muth, J. F. [1 ]
Saripalli, Y. N.
Peng, H. Y.
Everitt, H. O.
机构：
[1] N Carolina State Univ, Dept Elect & Comp Engn, Raleigh, NC 27606 USA
[2] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27606 USA
[3] Duke Univ, Dept Phys, Durham, NC 27708 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 22期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2208368
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Europium-doped beta-Ga2O3 thin films were grown on double-side polished c-axis (0001) sapphire substrates by pulsed laser deposition at 850 degrees C. Transmission measurements of the films revealed a sharp band edge with a band gap at 5.0 eV. The films exhibited intense red emission at 611 nm (2.03 eV) due to the transitions from D-5(0) to F-7(2) levels in europium, with intensities that increased with the concentration of europium. Time-resolved photoluminescence measurements revealed a temperature-insensitive lifetime of 1.4 ms, which is much longer than the lifetimes of europium luminescence observed in GaN hosts. (c) 2006 American Institute of Physics.
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页数：3
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