Effect of Gaussian doping profile on the performance of a thin film polycrystalline solar cell

被引：5
|
作者：
Kolsi, S. [1 ]
Ben Amar, M. [2 ]
Samet, H. [3 ]
Ouali, A. [1 ]
机构：
[1] Univ Sfax, Sfax Natl Engn Sch, Res Unit Adv & Control & Energy Management, ACEM,Dept Elect Engn, BP 1173, Sfax 3038, Tunisia
[2] Univ Sfax, Sci Fac Sfax, Dept Phys, Sfax 3000, Tunisia
[3] Univ Sfax, Sfax Natl Engn Sch, Dept Elect Engn, Elect Lab & Informat Technol,LETI, Sfax 3038, Tunisia
来源：
EMM-FM2011 - FIRST EURO MEDITERRANEAN MEETING ON FUNCTIONALIZED MATERIALS | 2012年 / 29卷
关键词：
D O I：
10.1051/epjconf/20122900025
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A two-dimensional (2D) analytical model based on the Green's Function method is applied to an n(+)-p thin film polycrystalline solar cell that allows us to calculate the conversion efficiency. This model considers the effective Gaussian doping profile in the p region in order to improve cell efficiency. The dependence of mobility and lifetime on grain doping is also investigated. This model is implemented through a simulation program in order to optimize conversion efficiency while varying thickness and doping profile in the base region of the cell. Compared with n(+)-p standard structure, our proposed structure shows a 43% improvement in conversion efficiency for a polycrystalline solar cell.
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页数：11
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