Mn4Si7 nanoinclusions in Mn-implanted Si

被引:1
|
作者
Romanowski, P. [1 ]
Bak-Misiuk, J. [1 ]
Sobczak, K. [1 ]
Dziawa, P. [1 ]
Dynowska, E. [1 ]
Szczepanska, A. [1 ]
Misiuk, A. [2 ]
机构
[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[2] Inst Electr Mat Technol, PL-02668 Warsaw, Poland
关键词
Si:Mn; Annealing; Nanoinclusions; X-ray diffraction; TEM; Ferromagnetism; MAGNETIC-PROPERTIES; DYNAMICAL THEORY; DIFFRACTION;
D O I
10.1016/j.radphyschem.2013.06.012
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Silicon single crystals were implanted with 160 keV Mn+ ions to a dose of 1 x 10(16) cm(-2) and next annealed for 1 h up to 1070 K under ambient pressure. Glancing incidence diffraction research performed using synchrotron radiation indicated that the post-implantation treatment influenced the creation of Mn4Si7 nanoinclusions. The dimensions and concentration of these inclusions, calculated from distribution of the X-ray diffuse scattering intensity are dependent on annealing temperature. The sizes and shapes of the inclusions were also determined by high-resolution transmission electron microscopy. Magnetic properties of the Si:Mn samples were studied using superconducting quantum interference device. The origin of ferromagnetic ordering is discussed in terms of the size of nanoinclusions. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码:67 / 71
页数:5
相关论文
共 50 条
  • [1] Investigation of current instabilities in Mn4Si7–Si:Mn–Mn4Si7 and Mn4Si7–Si:Mn–M heterojunctions
    T. S. Kamilov
    L. L. Aksenova
    B. Z. Sharipov
    I. V. Ernst
    [J]. Semiconductors, 2015, 49 : 1281 - 1284
  • [2] The Influence of Structural Defects in Silicon on the Formation of Photosensitive Mn4Si7–Si❬Mn❭–Mn4Si7 and Mn4Si7–Si❬Mn❭–M Heterostructures
    Kamilov T.S.
    Rysbaev A.S.
    Klechkovskaya V.V.
    Orekhov A.S.
    Igamov B.D.
    Bekpulatov I.R.
    [J]. Applied Solar Energy (English translation of Geliotekhnika), 2019, 55 (06): : 380 - 384
  • [3] Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M photodiodes
    D. M. Shukurova
    A. S. Orekhov
    B. Z. Sharipov
    V. V. Klechkovskaya
    T. S. Kamilov
    [J]. Technical Physics, 2011, 56 : 1423 - 1428
  • [4] Photoconduction amplification and quenching in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterostructures
    T. S. Kamilov
    I. V. Ernst
    A. Yu. Samunin
    [J]. Technical Physics, 2014, 59 : 1833 - 1838
  • [5] Photoconduction amplification and quenching in the Mn4Si7-Si⟨Mn⟩-Mn4Si7 and Mn4Si7-Si⟨Mn⟩-M heterostructures
    Kamilov, T. S.
    Ernst, I. V.
    Samunin, A. Yu.
    [J]. TECHNICAL PHYSICS, 2014, 59 (12) : 1833 - 1838
  • [6] Mn4Si7-SiaOE©Mn⟩-Mn4Si7 and Mn4Si7-SiaOE©Mn⟩-M photodiodes
    Shukurova, D. M.
    Orekhov, A. S.
    Sharipov, B. Z.
    Klechkovskaya, V. V.
    Kamilov, T. S.
    [J]. TECHNICAL PHYSICS, 2011, 56 (10) : 1423 - 1428
  • [7] Analysis of the induced photothermal conduction in the Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions
    T. S. Kamilov
    V. V. Klechkovskaya
    B. Z. Sharipov
    A. Turaev
    [J]. Technical Physics, 2013, 58 : 1182 - 1188
  • [8] Analysis of the Induced Photothermal Conduction in the Mn4Si7-Si⟨Mn⟩-Mn4Si7 and Mn4Si7-Si⟨Mn⟩-M Heterojunctions
    Kamilov, T. S.
    Klechkovskaya, V. V.
    Sharipov, B. Z.
    Turaev, A.
    [J]. TECHNICAL PHYSICS, 2013, 58 (08) : 1182 - 1188
  • [9] Photocurrent Saturation and Negative Differential Photoconductivity in Mn4Si7-Si⟨Mn⟩-Mn4Si7 and Mn4Si7-Si⟨Mn⟩-M Heterojunctions
    Kamilov, T. S.
    Klechkovskaya, V. V.
    Sharipov, B. Z.
    Ivakin, G. I.
    [J]. TECHNICAL PHYSICS, 2013, 58 (06) : 902 - 906
  • [10] Photocurrent saturation and negative differential photoconductivity in Mn4Si7-Si〈Mn〉-Mn4Si7 and Mn4Si7-Si〈Mn〉-M heterojunctions
    T. S. Kamilov
    V. V. Klechkovskaya
    B. Z. Sharipov
    G. I. Ivakin
    [J]. Technical Physics, 2013, 58 : 902 - 906