Mn4Si7 nanoinclusions in Mn-implanted Si

被引：1
|
作者：
Romanowski, P. [1 ]
Bak-Misiuk, J. [1 ]
Sobczak, K. [1 ]
Dziawa, P. [1 ]
Dynowska, E. [1 ]
Szczepanska, A. [1 ]
Misiuk, A. [2 ]
机构：
[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[2] Inst Electr Mat Technol, PL-02668 Warsaw, Poland
来源：
RADIATION PHYSICS AND CHEMISTRY | 2013年 / 93卷
关键词：
Si:Mn; Annealing; Nanoinclusions; X-ray diffraction; TEM; Ferromagnetism; MAGNETIC-PROPERTIES; DYNAMICAL THEORY; DIFFRACTION;
D O I：
10.1016/j.radphyschem.2013.06.012
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Silicon single crystals were implanted with 160 keV Mn+ ions to a dose of 1 x 10(16) cm(-2) and next annealed for 1 h up to 1070 K under ambient pressure. Glancing incidence diffraction research performed using synchrotron radiation indicated that the post-implantation treatment influenced the creation of Mn4Si7 nanoinclusions. The dimensions and concentration of these inclusions, calculated from distribution of the X-ray diffuse scattering intensity are dependent on annealing temperature. The sizes and shapes of the inclusions were also determined by high-resolution transmission electron microscopy. Magnetic properties of the Si:Mn samples were studied using superconducting quantum interference device. The origin of ferromagnetic ordering is discussed in terms of the size of nanoinclusions. (C) 2013 Elsevier Ltd. All rights reserved.
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页码：67 / 71
页数：5
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