A mechanism for the removal of dislocations in SOI compliant substrate systems

It is demonstrated that the time required for strain transference during the postgrowth anneal of a SOI compliant substrate system is much too long to explain the observed reduction in dislocation density in the resulting microstructure. A mechanism by which misfit dislocation segments are drawn out of the system through viscous dissipation in the bonding layer is proposed and demonstrated to be consistent with observation. The mechanism is modeled in the context of elastic dislocation theory and Linear viscoelasticity.