Progress in Research and Development of Solar-grade Silicon Preparation by Electron Beam Melting

被引:0
|
作者
Tan Yi [1 ,2 ]
Shi Shuang [1 ,2 ]
Jiang Da-Chuan [1 ,2 ]
机构
[1] Dalian Univ Technol, Sch Mat Sci & Engn, Dalian 116024, Peoples R China
[2] Key Lab Solar Energy Photovolta Syst Liaoning Pro, Dalian 116024, Peoples R China
基金
中国国家自然科学基金;
关键词
electron beam melting; solar-grade silicon; volatile impurities; review; METALLURGICAL SILICON; MOLTEN SILICON; POLYCRYSTALLINE SILICON; PHOSPHORUS REMOVAL; PURIFICATION; TECHNOLOGY; ALUMINUM; EVAPORATION; IMPURITIES; CELL;
D O I
暂无
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Electron beam melting is an effective method to remove volatile impurities in silicon due to its characteristics of high energy density and high vacuum degree, which has huge advantages and wide application prospects in preparation of solar-grade silicon. Currently it has been successfully applied in industry and become one of the key procedures for preparation of solar-grade silicon by metallurgical route. Based on the thermodynamic principle of the volatile impurities removal, the removal efficiency and mechanism are summarized in this paper. According to current problems of this technology combined with our own experience, the emphasis of current research is reviewed from the points of numerical simulation, energy-saving melting technology and coupling with directional solidification technology. The future development direction of this technology is also proposed.
引用
收藏
页码:785 / 792
页数:8
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