Plasma synthesis of thin copper silicide films on single-crystal silicon

被引：2
|
作者：
Turenko, EA [1 ]
Yatsenko, OB [1 ]
机构：
[1] Voronezh State Univ, Voronezh 394693, Russia
来源：
INORGANIC MATERIALS | 2002年 / 38卷 / 03期
关键词：
Copper; Silicon; Inorganic Chemistry; Electrical Property; Phase Composition;
D O I：
10.1023/A:1014710530668
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin copper silicide films were produced on single-crystal silicon by plasma synthesis via liquid-phase magnetron sputtering. The interaction of high-energy Cu ions with the negatively biased substrate was C C, C, shown to play a key role in the synthesis of copper silicides. The effects of the deposition time and copper ion energy on the structure, phase composition, and electrical properties of the resulting films were studied.
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页码：220 / 223
页数：4
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