Surface photovoltage analyses of Cu(In,Ga)S2/CdS and Cu(In,Ga)S2/In2S3 photovoltaic junctions

被引：7
|
作者：
Merdes, S. [1 ]
Osterloh, F. [2 ]
Saez-Araoz, R. [3 ]
Klaer, J. [3 ]
Klenk, R. [3 ]
Dittrich, T. [3 ]
机构：
[1] Helmholtz Zentrum Berlin, Competence Ctr Thin Film & Nanotechnol Photovolta, D-12489 Berlin, Germany
[2] Univ Calif Davis, Dept Chem, Davis, CA 95616 USA
[3] Helmholtz Zentrum Berlin, Inst Heterogeneous Mat Syst, D-14109 Berlin, Germany
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 21期
关键词：
SOLAR-CELLS; ELECTRONIC-PROPERTIES; EFFICIENCIES; TRANSPORT; LAYERS; CU;
D O I：
10.1063/1.4807889
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Spectrally dependent surface photovoltage measurements were performed with repetitive regime on Cu(In,Ga)S-2 absorbers and on Cu(In,Ga)S-2/CdS and Cu(In,Ga)S-2/In2S3 junctions. The results are correlated to current-voltage investigations of the respective completed solar cells. The measurements show the presence of a space charge region in the bare Cu(In,Ga)S-2 absorbers due to a high density of surface states. It is found that deposition of CdS increases the band bending whereas deposition of In2S3 does not change it. (C) 2013 AIP Publishing LLC.
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页数：3
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