In-situ monitoring during PLD of YBa2Cu3O7-δ using RHEED at high oxygen pressure

被引：3

作者：

Rijnders, GJHM ^{[1
]}

Koster, G ^{[1
]}

Blank, DHA ^{[1
]}

Rogalla, H ^{[1
]}

机构：

[1] Univ Twente, Dept Appl Phys, NL-7500 AE Enschede, Netherlands

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1999年 / 9卷 / 02期

关键词：

D O I：

10.1109/77.784689

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The surface morphology and initial growth of YBa2Cu3O7-delta, using Pulsed Laser Deposition (PLD), have been subject to in many studies. Both, Scanning Probe Microscopy (SPM) as well as Reflection High Energy Electron Diffraction (RHEED) have been applied. The latter is mostly operated using modified deposition parameters, like a reduced oxygen pressure. Here, we have studied the initial growth using a PLD-RHEED system at standard PLD pressures. In this system, in-situ RHEED can be applied in a background pressure of oxygen up to 50 Pa. The initial growth of YBa2Cu3O7-delta on SrTiO3 substrates is studied, The influence of the substrate termination, i.e., SrO or TiO2, on the growth will be discussed.

引用

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页码：1547 / 1550

页数：4

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