Key parameters for organic semiconductors used as active layers in organic electronic devices are: solution processability, charge carriers mobility as well as the electron affinity (EA) and the ionization potential (IP) which determine their redox properties and by consequence their air stability. The purpose of the present work was to investigate the influence of different substituents at imide nitrogen atom (alkylaryl, thienylene and triarylamine) and at naphthalene core (triarylamine) on the IP and EA values in recently synthesized naphthalene bisimide derivatives, tested as promising semiconductors for flexible n-channel or ambipolar organic field effect transistors (OFETs). The ionization potentials were determined by Ultra-violet Photoelectron Spectroscopy (UPS) for thin semiconductor films evaporated in ultra-high vacuum. The values obtained by photoelectron spectroscopy were compared with the ones determined from electrochemical investigations of the semiconductors dissolved in an electrolyte solution. Using cyclic voltammetry the IPs was estimated from the onset of the first oxidation peak whereas EAs from the onset of the first reduction peak. In cases where it was not possible to record the oxidation wave in the electrolyte electrochemical window, the IPs values were calculated by subtracting the energy of the spectroscopically (UV-vis-NIR) determined band gap from the EA values and changing the sign. A good correlation between the spectroscopic (UPS) and electrochemical data was found. (C) 2013 Elsevier Ltd. All rights reserved.
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Univ Paris Saclay, Inst Sci Mol Orsay ISMO, CNRS, Bat 520,Rue Andre Riviere, F-91405 Orsay, France
UC Louvain, Inst Condensed Matter & Nanosci ICMN, Chemin Cyclotron 2-L7-01-07, B-1348 Louvain La Neuve, BelgiumUniv Paris Saclay, Inst Sci Mol Orsay ISMO, CNRS, Bat 520,Rue Andre Riviere, F-91405 Orsay, France
Frereux, J. N.
Godard, M.
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Univ Paris Saclay, Inst Sci Mol Orsay ISMO, CNRS, Bat 520,Rue Andre Riviere, F-91405 Orsay, FranceUniv Paris Saclay, Inst Sci Mol Orsay ISMO, CNRS, Bat 520,Rue Andre Riviere, F-91405 Orsay, France
Godard, M.
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Dartois, E.
Pino, T.
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Univ Paris Saclay, Inst Sci Mol Orsay ISMO, CNRS, Bat 520,Rue Andre Riviere, F-91405 Orsay, FranceUniv Paris Saclay, Inst Sci Mol Orsay ISMO, CNRS, Bat 520,Rue Andre Riviere, F-91405 Orsay, France
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Institut des Sciences Moléculaires d Orsay (ISMO), Université Paris-Saclay, CNRS, Bât. 520, Rue André Rivière, OrsayInstitut des Sciences Moléculaires d Orsay (ISMO), Université Paris-Saclay, CNRS, Bât. 520, Rue André Rivière, Orsay
Fréreux J.N.
Godard M.
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Institut des Sciences Moléculaires d Orsay (ISMO), Université Paris-Saclay, CNRS, Bât. 520, Rue André Rivière, OrsayInstitut des Sciences Moléculaires d Orsay (ISMO), Université Paris-Saclay, CNRS, Bât. 520, Rue André Rivière, Orsay
Godard M.
Dartois E.
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Institut des Sciences Moléculaires d Orsay (ISMO), Université Paris-Saclay, CNRS, Bât. 520, Rue André Rivière, OrsayInstitut des Sciences Moléculaires d Orsay (ISMO), Université Paris-Saclay, CNRS, Bât. 520, Rue André Rivière, Orsay
Dartois E.
Pino T.
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Institut des Sciences Moléculaires d Orsay (ISMO), Université Paris-Saclay, CNRS, Bât. 520, Rue André Rivière, OrsayInstitut des Sciences Moléculaires d Orsay (ISMO), Université Paris-Saclay, CNRS, Bât. 520, Rue André Rivière, Orsay