Stress analysis of a full bridge ZVS DC-DC converter

被引：0
|
作者：
Abedinpour, S [1 ]
Burra, R [1 ]
Shenai, K [1 ]
机构：
[1] Univ Illinois, Dept Elect Engn & Comp Sci, Chicago, IL 60607 USA
来源：
CONFERENCE RECORD OF THE 2001 IEEE INDUSTRY APPLICATIONS CONFERENCE, VOLS 1-4 | 2001年
关键词：
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
This paper presents the MOSFET electrical stresses in a full bridge (FB) ZVS DC-DC converter with a detailed study of the MOSFET body diode reverse recovery stress under normal and low load operating conditions. Experimental results are presented under normal and low load operation for a 350V - 3.5V, 225A FB ZVS DC-DC converter. Two-dimensional (2-D) numerical simulation results of internal dynamics of the device during switching prove that the MOSFET body diode reverse recovery under no load conditions is stressful as opposed to the reverse recovery under normal operating condition. A test circuit is also designed to characterize the body diode reverse recovery performance. A detailed failure analysis for the MOSFETs failed in the reverse recovery test circuit under high stress conditions is also presented.
引用
收藏
页码：664 / 671
页数：8
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