Investigation of microstructure and chemical composition of Ni contacts to n-type 4H-SiC

被引：14

作者：

Rogowski, Jacek ^{[1
]}

Kubiak, Andrzej ^{[2
]}

机构：

[1] Tech Univ Lodz, Inst Gen & Ecol Chem, PL-90924 Lodz, Poland

[2] Tech Univ Lodz, Dept Semicond & Optoelect Devices, PL-90924 Lodz, Poland

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2012年 / 177卷 / 15期

关键词：

Silicon carbide; Ohmic contact; TOF-SIMS; OHMIC CONTACTS; NICKEL SILICIDE; FILM;

D O I：

10.1016/j.mseb.2012.01.012

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Structure and chemical compositions of the interface layer obtained after nickel deposition on silicon carbide surface and subsequent annealing have been analyzed using time-of-flight secondary ion mass spectrometry (TOF-SIMS), X-ray diffraction (XRD) and Raman spectroscopy. Nickel silicide (Ni2Si) were characterized as the main product of reaction between nickel and silicon carbide after annealing at temperatures range 700-1000 degrees C. Raman spectroscopy and TOF-SIMS profiling results confirmed carbon precipitation within contact layer. Obtained results indicate graphitic form of carbon and its non-uniform distribution in the contact layer. Moreover, TOF-SIMS analysis showed modification of nitrogen distribution in the contact area upon Ni/SiC contact annealing. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：1318 / 1322

页数：5

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