Monolithic, high transimpedance gain (3.3 kΩ), 40 Gbit s InP-HBT photoreceiver with differential outputs

被引：20
|
作者：
Huber, A
Huber, D
Morf, T
Jäckel, H
Bergamaschi, C
Hurm, V
Ludwig, M
Schlechtweg, M
机构：
[1] Swiss Fed Inst Technol, Elect Lab, CH-8092 Zurich, Switzerland
[2] FH Aargau, Fachgrp Angew Schaltungstech, CH-5210 Windisch, Switzerland
[3] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany
来源：
ELECTRONICS LETTERS | 1999年 / 35卷 / 11期
关键词：
D O I：
10.1049/el:19990597
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A monolithically integrated, lumped 40Gbit/s photoreceiver consisting of an InGaAs pin-photodetector, an InP/lnGaAs SHBT transimpedance and a differential post-amplifier is presented. The complete circuit has an optical/electrical bandwidth of 28GHz. The open 40Gbit/s eye diagrams demonstrate the successful highspeed operation of the photoreceiver. The transimpedance gain of the circuit was measured to be 3.3k Omega (differential) which is the highest transimpedance yet reported for any monolithically integrated 40Gbit/s photoreceiver.
引用
收藏
页码：897 / 898
页数：2
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