Compact Modeling Based Extraction of RF Noise in SiGe HBT Terminal Currents

被引：0

作者：

Xu, Ziyan ^{[1
]}

Niu, Guofu ^{[1
]}

机构：

[1] Auburn Univ, Elect & Comp Engn Dept, Auburn, AL 36849 USA

来源：

2012 IEEE 12TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF) | 2012年

关键词：

Noise modeling; SiGe HBT; RF noise; FREQUENCY; PARAMETER;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a general purpose method of extracting RF noise in SiGe HBT base and collector currents using the very same compact models used for RFIC design. Practical issues with experimental data are discussed.

引用

页码：137 / 140

页数：4

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