A Noise and RTN-Removal Smart Method for Parameters Extraction of CMOS Aging Compact Models

被引：0
|
作者：
Diaz-Fortuny, Javier [1 ]
Martin-Martinez, Javier [1 ]
Rodriguez, Rosana [1 ]
Nafria, Montserrat [1 ]
Castro-Lopez, Rafael [2 ,3 ]
Roca, Elisenda [2 ,3 ]
Fernandez, Francisco, V [2 ,3 ]
机构：
[1] Univ Autonoma Barcelona UAB, Elect Engn Dept, REDEC Grp, Barcelona, Spain
[2] CSIC, IMSE CNM, Inst Microelect Sevilla, Seville, Spain
[3] Univ Seville, Seville, Spain
来源：
2018 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS) | 2018年
关键词：
CMOS; BTI; HCI; parameters; extraction; method; RTN; defects; aging;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This work presents a new method to statistically characterize the emission times and threshold voltage shifts (Delta V-th ) related to oxide defects in nanometer CMOS transistors during aging tests. The method identifies the V-th drops associated to oxide trap emissions during BTI and HCI aging recovery traces while removing RTN and background noise contributions, to avoid artifacts during data analysis.
引用
收藏
页码：85 / 88
页数：4
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