Identification of a strong contamination source for graphene in vacuum systems

被引：7
|
作者：
Caillier, Christophe [1 ,2 ]
Ki, Dong-Keun [1 ,2 ]
Lisunova, Yuliya [1 ]
Gaponenko, Iaroslav [1 ]
Paruch, Patrycja [1 ]
Morpurgo, Alberto F. [1 ,2 ]
机构：
[1] Univ Geneva, DPMC MaNEP, CH-1211 Geneva, Switzerland
[2] Univ Geneva, GAP, CH-1211 Geneva, Switzerland
来源：
NANOTECHNOLOGY | 2013年 / 24卷 / 40期
基金：
瑞士国家科学基金会;
关键词：
CHEMICAL-VAPOR-DEPOSITION; LARGE-AREA; FILMS; SURFACES; GRAPHITE;
D O I：
10.1088/0957-4484/24/40/405201
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
To minimize parasitic doping effects caused by uncontrolled material adsorption, graphene is often investigated under vacuum. Here we report an entirely unexpected phenomenon occurring in vacuum systems, namely strong n-doping of graphene due to chemical species generated by common ion high-vacuum gauges. The effect-reversible upon exposing graphene to air-is significant, as doping rates can largely exceed 10(12) cm(-2) h(-1), depending on pressure and the relative position of the gauge and the graphene device. It is important to be aware of this phenomenon, as its basic manifestation can be mistakenly interpreted as vacuum-induced desorption of p-dopants.
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页数：5
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