Mass transfer in A1N crystal growth at high temperatures

被引:47
|
作者
Noveski, V
Schlesser, R
Mahajan, S
Beaudoin, S
Sitar, Z
机构
[1] N Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA
[2] Arizona State Univ, Dept Chem & Mat Engn, Res Ctr, Tempe, AZ 85287 USA
[3] Purdue Univ, Sch Chem Engn, W Lafayette, IN 47907 USA
关键词
mass transfer; sublimation growth; aluminum nitride crystal;
D O I
10.1016/j.jcrysgro.2004.01.028
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
A one-dimensional mass transfer model based on equilibrium sublimation and gas phase diffusion was developed for high-temperature sublimation growth of AIN in an RF heated reactor and validated with growth results. The model predicted the apparent activation energy for growth to be close to the energy of sublimation. Using the model-predicted growth conditions, a 25 min diameter polycrystalline boule was grown at a rate of 1 mm/h. Growth was performed at short source-to-seed distances (similar to 10 min), nitrogen pressure of 600 Torr, nitrogen flow-rate of 100 sccm, and source temperatures ranging from 2000degreesC to 2400degreesC. Fast grain size development was achieved in the growth direction. The grown material was transparent and virtually colorless. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:369 / 378
页数:10
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