Thermoelectric properties of P-type(Bi0.26Sb0.74)2Te3+3%Te ingots prepared by vacuum melting

被引:10
|
作者
Xu, Zhijun [1 ]
Yang, Junyou [1 ]
Xiao, Ye [1 ]
Li, Gen [1 ]
Zhang, Jian Sheng [1 ]
Peng, Jiangying [1 ]
机构
[1] Huazhong Univ Sci & Technol, State Key Lab Mat Proc & Die & Mould Technol, 1037 Luoyu Rd, Wuhan 430074, Peoples R China
来源
关键词
Thermoelectric materials; Bismuth telluride; Vacuum melting; Thermoelectric properties; BISMUTH TELLURIDE; ALLOYS;
D O I
10.1016/j.proeng.2011.12.435
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
P-type(Bi0.26Sb0.74)(2)Te-3+3% Te ingots were prepared by cooling at various cooling rates after vacuum melting. In this paper, the chemical composition, structure and thermoelectric properties of the crystals were evaluated by XRD, SEM, EDAX and thermoelectric measurements including Seebeck coefficient, electrical conductivity and thermal conductivity. With increase of cooling rates, Te-rich phase presents in the crystals, the electrical conductivity increases and the Seebeck coefficient decreases. While thermal conductivities of all ingots are all lower than 1.3W/mK. The maximum ZT (T=298K) was 1.12, which was obtained in the p-type(Bi0.26Sb0.74)(2)Te-3+3% Te ingot prepared at a cooling rate of 4K/min. (C) 2011 Published by Elsevier Ltd. Selection and/or peer-review under responsibility of Chinese Materials Research Society Open access under CC BY-NC-ND license.
引用
收藏
页码:137 / 143
页数:7
相关论文
共 21 条
  • [1] STUDY OF THE BI-SB-TE TERNARY PHASE-DIAGRAM
    CAILLAT, T
    CARLE, M
    PERRIN, D
    SCHERRER, H
    SCHERRER, S
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1992, 53 (02) : 227 - 232
  • [2] Preferential orientation and thermoelectric properties of p-type Bi0.4Sb1.6Te3 system alloys by mechanical alloying and equal channel angular extrusion
    Fan, X. A.
    Yang, J. Y.
    Zhu, W.
    Bao, S. Q.
    Duan, X. K.
    Xiao, C. J.
    Li, K.
    [J]. JOURNAL OF ALLOYS AND COMPOUNDS, 2008, 461 (1-2) : 9 - 13
  • [3] Characterization and thermoelectric properties of p-type 25%Bi2Te3-75% Sb2Te3 prepared via mechanical alloying and plasma activated sintering
    Fan, XA
    Yang, JY
    Chen, RG
    Yun, HS
    Zhu, W
    Bao, SQ
    Duan, XK
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2006, 39 (04) : 740 - 745
  • [4] Electronic structure of Bi2Te3 studied by angle-resolved photoemission
    Greanya, VA
    Tonjes, WC
    Liu, R
    Olson, CG
    Chung, DY
    Kanatzidis, MG
    [J]. PHYSICAL REVIEW B, 2000, 62 (24) : 16425 - 16429
  • [5] Enhancement of the yield of high-quality ingots in the zone-melting growth of p-type bismuth telluride alloys
    Ha, HP
    Hyun, DB
    Byun, JY
    Oh, YJ
    Yoon, EP
    [J]. JOURNAL OF MATERIALS SCIENCE, 2002, 37 (21) : 4691 - 4696
  • [6] High thermoelectric performance at low temperature of p-Bi1.8Sb0.2Te3.0 grown by the gradient freeze method from Te-rich melt
    Huong, NT
    Setou, Y
    Nakamoto, G
    Kurisu, M
    Kajihara, T
    Mizukami, H
    Sano, S
    [J]. JOURNAL OF ALLOYS AND COMPOUNDS, 2004, 368 (1-2) : 44 - 50
  • [7] Effect of excess Te addition on the thermoelectric properties of the 20% Bi2Te3-80% Sb2Te3 single crystal and hot-pressed alloy
    Hyun, DB
    Oh, TS
    Hwang, JS
    Shim, JD
    [J]. SCRIPTA MATERIALIA, 2001, 44 (03) : 455 - 460
  • [8] Effect of TeI4 content on the thermoelectric properties of n-type Bi-Te-Se crystals prepared by zone melting
    Jiang, J
    Chen, LD
    Yao, Q
    Bai, SQ
    Wang, Q
    [J]. MATERIALS CHEMISTRY AND PHYSICS, 2005, 92 (01) : 39 - 42
  • [9] Thermoelectric properties for P-type (Bi2Te3)0.2(Sb2Te3)0.8 alloys fabricated by shear extrusion
    Kim, Sang Seok
    Aizawa, Tatsuhiko
    [J]. METALS AND MATERIALS INTERNATIONAL, 2006, 12 (04) : 317 - 322
  • [10] Liu E, 2003, SEMICONDUCTOR PHYS, P167