Electronic structures of individual poly(3-hexylthiophene) nanowires on hydrogen-terminated Si(100) surfaces

被引：3
|
作者：
Terada, Y [1 ]
Shigekawa, H
Suwa, Y
Heike, S
Fujimori, M
Hashizume, T
机构：
[1] Univ Tsukuba, Inst Appl Phys, CREST, 21st COE, Tsukuba, Ibaraki 3058573, Japan
[2] Hitachi Ltd, Adv Res Lab, Hatoyama, Saitama 3500395, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 3B期
关键词：
scanning tunneling microscopy/spectroscopy (STM/STS); first-principles calculation; electronic structures; conducting polymer; P3HT; Si(100);
D O I：
10.1143/JJAP.45.1956
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electronic structures of individual conducting polymers, poly(3-hexylthiophene)s (P3HTs), fixed on a hydrogen-terminated Si(100) surface have been examined by scanning tunneling rnicroscopy/spectroscopy and first-principles calculations within the density-functional approach. The calculations reveal that the electronic structure of the polymer is only weakly influenced by the substrate, which ensures that the fixed polymers maintain a conduction property similar to that of isolated polymers. The current-voltage curves for the substrate-molecule-tip junction show rectification characteristics, indicating the carrier doping in the fixed polymers.
引用
收藏
页码：1956 / 1961
页数：6
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