Comprehensive structural and optical characterization of AlAs/GaAs distributed Bragg reflector

被引:3
|
作者
Alaydin, B. O. [1 ,4 ]
Tuzemen, E. S. [1 ,4 ]
Altun, D. [2 ,4 ]
Elagoz, S. [3 ,4 ]
机构
[1] Cumhuriyet Univ, Dept Phys, TR-58140 Sivas, Turkey
[2] Cumhuriyet Univ, Dept Elect & Elect Engn, TR-58140 Sivas, Turkey
[3] Cumhuriyet Univ, Dept Nanotechnol Engn, TR-58140 Sivas, Turkey
[4] Cumhuriyet Univ, Nanophoton Applicat & Res Ctr, TR-58140 Sivas, Turkey
来源
关键词
DBR; AlAs/GaAs HR-XRD; reflectivity; Theta/2-Theta; RSM;
D O I
10.1142/S0217979219500541
中图分类号
O59 [应用物理学];
学科分类号
摘要
30-pair AlAs/GaAs distributed Bragg reflector (DBR), which has 1030 nm center reflectivity, is studied extensively by means of High Resolution X-ray Diffraction (HR-XRD) and reflectivity measurements. Theta/2-Theta measurements and dynamical simulations have been done for (002), (004) and (006) planes to determine strain and thickness of AlAs and GaAs layers in the DBR stack. Reciprocal space mappings (RSMs) are measured for same planes and also for (224) plane to find out tilt and relaxation of the DBR stack. Relaxation is not observed and it is confirmed with symmetric in-plane (400) Theta/2-Theta and RSM measurements. This is a first study in the literature according to the best of our knowledge. Finally, we have shown sensitivity of high angle diffraction planes to disorders in crystal. Angle-dependent reflectivity simulations have been also done and compared with measurements. 99.99% reflectivity is obtained with 99.5 nm stop bandwidth and 482.7 nm penetration depth.
引用
收藏
页数:13
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