Effect of FIB milling on MEMS SOI cantilevers

被引：0

作者：

Venkatesh, C. ^{[1
]}

Singh, P. P. ^{[2
]}

Renilkumar, M. ^{[2
]}

Varma, M. ^{[2
]}

Bhat, N. ^{[2
]}

Pratap, R. ^{[2
]}

Martyniuk, M. ^{[1
]}

Keating, A. ^{[1
]}

Umama-Membreno, G. A. ^{[1
]}

Silva, K. K. M. B. D. ^{[1
]}

Dell, J. M. ^{[1
]}

Faraone, L. ^{[1
]}

机构：

[1] Univ Western Australia, Sch Elect Elect & Comp Engn, 35 Stirling Highway, Crawley, WA 6009, Australia

[2] Indian Inst Sci, Ctrt Nano Sci & Engn, Bangalore 560012, Karnataka, India

来源：

2012 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAD 2012) | 2012年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Stress induced by Focused Ion Beam (FIB) milling of cantilevers fabricated on silicon-on-insulator (SOI) wafer has been studied. Milling induces stress gradients ranging from -10MPa/mu m to -120MPa/mu m, depending on the location of cantilevers from the point of milling. Simulations were done to estimate the stress in the milled cantilevers.

引用

页码：165 / +

页数：2

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