Phase-field model for grain boundary grooving in multi-component thin films

被引:17
|
作者
Bouville, Mathieu [1 ]
Hu, Shenyang
Chen, Long-Qing
Chi, Dongzhi
Srolovitz, David J.
机构
[1] Inst Mat Res & Engn, Singapore 117602, Singapore
[2] Los Alamos Natl Lab, Los Alamos, NM 87545 USA
[3] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
[4] Inst High Performance Comp, Singapore 117528, Singapore
[5] Princeton Univ, Dept Mech & Aerosp Engn, Princeton, NJ 08544 USA
关键词
D O I
10.1088/0965-0393/14/3/007
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Polycrystalline thin films can be unstable with respect to island formation ( agglomeration) through grooving where grain boundaries intersect the free surface and/or thin film - substrate interface. We develop a phase-field model to study the evolution of the phases, composition, microstructure and morphology of such thin films. The phase-field model is quite general, describing compounds and solid solution alloys with sufficient freedom to choose solubilities, grain boundary and interface energies and heats of segregation to all interfaces. We present analytical results which describe the interface profiles, with and without segregation, and confirm them using in numerical simulations. We demonstrate that the present model accurately reproduces theoretical grain boundary groove angles both at and far from equilibrium. As an example, we apply the phase-field model to the special case of a Ni(Pt)Si (nickel/platinum silicide) thin film on an initially flat silicon substrate.
引用
收藏
页码:433 / 443
页数:11
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