Characteristics of the AlGaAs/GaAs Broad-Area Vertical-Cavity Surface-Emitting Lasers

被引:0
|
作者
Yang, Hung-Pin D. [1 ]
Su, Yeung-Sy [1 ]
Jiang, Wen-Jang [1 ]
Wang, Mei-Li [1 ]
Tsou, Yi-Jen [1 ]
机构
[1] Ind Technol Res Inst, Optoelect & Syst Labs, Div Optoelect Mat & Devices, Hsinchu 310, Taiwan
关键词
broad-area; near-field; VCSEL;
D O I
10.7567/JJAPS.39S1.455
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report the results of the AlGaAs/GaAs broad-area vertical-cavity surface-emitting lasers at 850 nm. A maximum laser optical power of 23.4 mW was measured for a device with a 50-mu m aperture. The near-field characteristics and spectrum of the devices were also measured and analyzed.
引用
收藏
页码:455 / 456
页数:2
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