Engineering of the Chemical Reactivity of the Ti/HfO2 Interface for RRAM: Experiment and Theory.

被引：52
|
作者：
Calka, Pauline [1 ]
Sowinska, Malgorzata [1 ]
Bertaud, Thomas [1 ]
Walczyk, Damian [1 ]
Dabrowski, Jarek [1 ]
Zaumseil, Peter [1 ]
Walczyk, Christian [1 ]
Gloskovskii, Andrei [2 ]
Cartoixa, Xavier [3 ]
Sune, Jordi [3 ]
Schroeder, Thomas [1 ,4 ]
机构：
[1] IHP, D-15236 Frankfurt, Germany
[2] Deutsch Elektronen Synchrotron DESY, D-22607 Hamburg, Germany
[3] Univ Autonoma Barcelona, Dept Elect Engn, Bellaterra 08193, Spain
[4] Brandenburg Tech Univ Cottbus, D-03046 Cottbus, Germany
来源：
ACS APPLIED MATERIALS & INTERFACES | 2014年 / 6卷 / 07期
关键词：
RRAM; Ti/HfO2; oxygen vacancy stability; oxygen diffusion; amorphous HfO2; reliability; PROGRAM; SYSTEMS; ZRO2;
D O I：
10.1021/am500137y
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The Ti/HfO2 interface plays a major role for resistance switching performances. However, clear interface engineering strategies to achieve reliable and reproducible switching have been poorly investigated. For this purpose, we present a comprehensive study of the Ti/HfO2 interface by a combined experimental theoretical approach. Based on the use of oxygen-isotope marked Hf*O-2, the oxygen scavenging capability of the Ti layer is clearly proven. More importantly, in line with ab initio theory, the combined HAXPES-Tof-SIMS study of the thin films deposited by MBE clearly establishes a strong impact of the HfO2 thin film morphology on the Ti/HfO2 interface reactivity. Low-temperature deposition is thus seen as a RRAM processing compatible way to establish the critical amount of oxygen vacancies to achieve reproducible and reliable resistance switching performances.
引用
收藏
页码：5056 / 5060
页数：5
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