Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy (vol 117, 051601, 2020)

被引：0
|
作者：
Chen, Yang [1 ,2 ]
Zang, Hang [1 ,2 ]
Jiang, Ke [1 ,2 ]
Ben, Jianwei [1 ,3 ]
Zhang, Shanli [1 ,2 ]
Shi, Zhiming [1 ,2 ]
Jia, Yuping [1 ,2 ]
Lu, Wei [1 ,4 ]
Sun, Xiaojuan [1 ,2 ]
Li, Dabing [1 ,2 ]
机构：
[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, State Key Lab Luminescence & Applicat, Changchun 130033, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
[3] Shenzhen Univ, Coll Mat Sci & Engn, Shenzhen 518071, Peoples R China
[4] Changchun Univ Technol, Key Lab Adv Struct Mat, Minist Educ, Changchun 130012, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 2020年 / 117卷 / 09期
关键词：
D O I：
10.1063/5.0025404
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页数：1
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