Analysis of light-induced degradation mechanisms in α-Si:H/μc-Si:H solar photovoltaics

被引：0
|
作者：
Emelyanov, V. M. [1 ]
Abramov, A. S. [1 ,2 ]
Bobyl, A. V. [1 ]
Verbitsky, V. N. [1 ,4 ]
Gudovskikh, A. S. [3 ]
Ershenko, E. M. [1 ]
Kudryashov, S. A. [1 ]
Terukov, E. I. [1 ,2 ]
Chosta, O. I. [1 ]
Shvarts, M. Z. [1 ,2 ]
机构：
[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[2] OOO R&D Ctr Thin Film Technol Energet Ioffe Inst, St Petersburg 194064, Russia
[3] St Petersburg Acad Univ, Russian Acad Sci, Nanotechnol Res & Educ Ctr, St Petersburg 194021, Russia
[4] Hevel OOO, Moscow 123022, Russia
来源：
SEMICONDUCTORS | 2013年 / 47卷 / 09期
关键词：
HYDROGENATED AMORPHOUS-SILICON; COLLISION MODEL; FLOATING BONDS; ALLOY-FILMS; DEFECTS; METASTABILITY; CREATION;
D O I：
10.1134/S1063782613090066
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The photoinduced degradation of the i-alpha-Si:H layer in tandem photovoltaic converters based on alpha-Si:H/mu c-Si:H structures is analyzed in terms of the "H-collision-" and "floating-bond" models and modifications of these. It is shown that the form of the degradation dependence is well described by all models under consideration. Compared with the modified models, the original "H-collision-" and "floating-bond" models yield estimates for saturated dangling-bond concentrations, which are always dependent on the intensity of the light that caused the degradation. The modified "floating-bond" model makes it possible to exclude this dependence, and the modified "H-collision" model describes the occurrence of this dependence in a certain range of illumination intensities and its absence in another range, which is in best agreement with experimental data.
引用
收藏
页码：1252 / 1257
页数：6
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