Analysis of inherent properties of SiGe hetero-structure device using Analytical modeling and Simulation

被引：0
|
作者：
Verma, Yogesh Kumar [1 ]
Gupta, Santosh Kumar [1 ]
Chauhan, Rajeev K. [2 ]
机构：
[1] MNNIT, ECED, Allahabad, Uttar Pradesh, India
[2] MMMEC, ECED, Gorakhpur, Uttar Pradesh, India
来源：
2017 2ND INTERNATIONAL CONFERENCE FOR CONVERGENCE IN TECHNOLOGY (I2CT) | 2017年
关键词：
Silicon Germanium HBT; reliability; temperature; EXTREME ENVIRONMENT ELECTRONICS; BIPOLAR-TRANSISTORS; PROFILE DESIGN; HBT;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, analytical and simulation based analysis to verify the inherent properties of SiGe HBT is done. The major performance parameters of SiGe HBT are cut-off freuency f(T), maximum oscillation frequency f(max), base transit time T-b, current gain I and electron mobility mu(n) of SiGe base. These performance parameters are responsible for the reliability of SiGe HBT. Temperature is one of the major reliability issues. The impact of temperature variation on these performance parameters is analyzed using Silvaco Atlas Device Simulator along with analytical modeling.
引用
收藏
页码：644 / 648
页数：5
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