β-SiC thin films grown by PECVD at low temperature

被引：0

作者：

Liu, W ^{[1
]}

Wang, M

Wang, H

Wang, B

Yan, H

Liao, B

Wang, JJ

机构：

[1] Beijing Polytech Univ, Key Lab Adv Funct Mat, Minist Educ, Beijing 100022, Peoples R China

[2] Beijing Inst Technol Dept, Beijing 100081, Peoples R China

来源：

RARE METAL MATERIALS AND ENGINEERING | 2001年 / 30卷

关键词：

SiC thin films; PECVD; beta-SiC;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

beta-SiC thin films were grown on Si(100) using PECVD at 400degreesCsimilar to700degreesC. The structure and composition of the samples were analyzed by FTIR and XRD. The influences of substrate temperature on the crystalline degree of SiC thin films in certain deposit conditions were discussed and the thin films with perfect crystalline degree at 600degreesC were obtained.

引用

页码：479 / 481

页数：3