A highly sensitive spin-valve transistor

被引：0
|
作者：
Van't Erve, OMJ [1 ]
Vlutters, R [1 ]
Kumar, PSA [1 ]
Kim, SD [1 ]
Jansen, R [1 ]
Lodder, JC [1 ]
机构：
[1] Univ Twente, MESA Res Inst, Informat Storage Technol Grp, NL-7500 AE Enschede, Netherlands
来源：
MAGNETIC STORAGE SYSTEMS BEYOND 2000 | 2001年 / 41卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we present a spin-valve transistor made with a silicon on insulator wafer as emitter and a double sided polished Si wafer as collector. Using vacuum metal bonding we obtain a three terminal device in which a spin-valve layer is sandwiched between two Si wafers. We measure a 217% change in the collector current with magnetic field using a spin valve that shows only 0.5% resistance change in a current in plane measurement.
引用
收藏
页码：441 / 444
页数：4
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