Sensitivity analyses of furnace material properties in the Czochralski crystal growth method for silicon

被引：4
|
作者：
Noghabi, O. R. Asadi [1 ,2 ]
M'Hamdi, M. [1 ,2 ]
Jomaa, M. [2 ]
机构：
[1] Norwegian Univ Sci & Technol, N-7465 Trondheim, Norway
[2] SINTEF Mat Technol, NO-0315 Oslo, Norway
来源：
MEASUREMENT SCIENCE AND TECHNOLOGY | 2013年 / 24卷 / 01期
关键词：
numerical simulation; Czochralski process; thermophysical properties; emissivity; thermal conductivity; NUMERICAL-SIMULATION; GLOBAL SIMULATION; THERMOPHYSICAL PROPERTIES; MELT CONVECTION; SINGLE-CRYSTALS; BULK DEFECTS; SI; TRANSPORT; DESIGN; FLOW;
D O I：
10.1088/0957-0233/24/1/015601
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Reliability of the numerical simulation results strongly depends on the input data, in particular on the thermo-physical properties of the furnace components, e. g. graphite thermal conductivity and steel surface emissivity. Uncertainties are always involved in the measurement of these parameters. A set of global 2D simulations has been carried out in order to investigate the impact of each property on the growth conditions in Czochralski silicon growth furnaces. The results indicate that steel emissivity and felt conductivity have significant impact on the calculated thermal field and energy consumption.
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页数：9
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