Bismuth alloying properties in GaAs nanowires

被引：4

作者：

Ding, Lu ^{[1
]}

Lu, Pengfei ^{[1
]}

Cao, Huawei ^{[1
]}

Cai, Ningning ^{[1
]}

Yu, Zhongyuan ^{[1
]}

Gao, Tao ^{[2
]}

Wang, Shumin ^{[3
,4
]}

机构：

[1] Beijing Univ Posts & Telecommun, Minist Educ, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China

[2] Sichuan Univ, Inst Atom & Mol Phys, Chengdu 610065, Peoples R China

[3] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[4] Chalmers Univ Technol, Dept Microtechnol & Nanosci, Photon Lab, S-41296 Gothenburg, Sweden

来源：

JOURNAL OF SOLID STATE CHEMISTRY | 2013年 / 205卷

基金：

中国国家自然科学基金;

关键词：

GaAsBi nanowires; Electronic structure; Optical properties; ELECTRONIC-STRUCTURE; OPTICAL-PROPERTIES; GROWTH; SENSITIVITY; EPITAXY; ATOMS;

D O I：

10.1016/j.jssc.2013.07.005

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

First-principles calculations have been performed to investigate the structural, electronic and optical properties of bismuth alloying in GaAs nanowires. A typical model of Ga31As31 nanowires is introduced for its reasonable band gap. The band gap of GaAs1-xBix shrinks clearly with the increasing Bi concentration and the band edge shifts when spin-orbit coupling (SOC) is considered. The insertion of Bi atom leads to hybridization of Ga/As/Bi p states which contributes a lot around Fermi level. Scissor effect is involved. The optical properties are presented, including dielectric function, optical absorption spectra and reflectivity, which are also varied with the increasing of Bi concentrations. (c) 2013 Elsevier Inc. All rights reserved.

引用

页码：44 / 48

页数：5

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