Vibrational instability due to coherent tunneling of electrons

被引:60
|
作者
Fedorets, D [1 ]
Gorelik, LY
Shekhter, RI
Jonson, M
机构
[1] Chalmers Univ Technol, Dept Appl Phys, SE-41296 Gothenburg, Sweden
[2] Univ Gothenburg, SE-41296 Gothenburg, Sweden
来源
EUROPHYSICS LETTERS | 2002年 / 58卷 / 01期
关键词
D O I
10.1209/epl/i2002-00611-3
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Effects of a coupling between the mechanical vibrations of a quantum dot placed between the two leads of a single-electron transistor and coherent tunneling of electrons through a single level in the dot has been studied. We have found that for bias voltages exceeding a certain critical value a dynamical instability occurs and mechanical vibrations of the dot develop into a stable limit cycle. The current-voltage characteristics for such a transistor were calculated and they seem to be in reasonably good agreement with recent experimental results for the single-C-60-molecule transistor by Park et al. (Nature 407 ( 2000) 57).
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页码:99 / 104
页数:6
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